Renesas showcases MRAM for SoC
Renesas Technology showcased 1 Mbit chip Magnetoresistive Random Access Memory made using 0.13µm CMOS process for system-on-chip solutions.
According to the tests, the chip clock rate is 143 MHz at 1.2 V, while the number of rewrite cycles made 1 trillion at 150°C without reducing the physical state. Finally, cell read time made 5.2 ns.
If you remember, MRAM memory is made of magnetic materials (often used in magnetic heads) and Magnetic Tunnel Junction (MTJ), so the performance depends on MTJ structure.
The showcased MRAM prototypes have 1T-1MTJ architecture (1 transistor and 1 memory cell transition), the tunnel magneto-resistance element (TMR) is sized 0.26x0.44µm², while a memory cell is sized 0.81µm².
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