IBM Announces Advanced 28-Nanometer, Low-Power Semiconductor Technology
IBM, Chartered Semiconductor Manufacturing, GLOBALFOUNDRIES, Infineon Technologies, Samsung Electronics, and STMicroelectronics have defined and are jointly developing a 28-nanometer (nm), high-k metal gate (HKMG), low-power bulk complementary metal oxide semiconductor (CMOS) process technology.
The low-power, 28nm technology platform can provide power-performance and time-to-market advantages for producers of a broad range of power-sensitive mobile and consumer electronics applications, including the fast-growing mobile Internet device market segment. The favorable leakage characteristics of the HKMG technology result in optimized battery life for the next generation of mobile products.
A 28nm low-power technology evaluation kit was previously made available in December 2008 to early access clients, followed by release in March 2009 of an evaluation kit for open access to the general marketplace. Early risk production is anticipated in the second half of 2010.
Already working with clients on 32nm low-power technology, the alliance has gained valuable experience in the implementation of HKMG technology, and is offering a migration path from 32nm to 28nm technology. Clients can begin their designs today in 32nm HKMG technology and then move to 28nm technology for density and power advantages, without the need for a major redesign.
Preliminary results working with early access clients and partners indicate that the 28nm technology platform can provide a 40 percent performance improvement and a more than 20 percent reduction in power -- all in a chip that is half the size -- compared with 45nm technology. The high-k metal gate implementation allows one of the industry's smallest SRAM cells at 0.120 square microns, with low minimum voltage operation and competitive performance, leakage and stability.
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