Renesas announces superSRAM memory
Japanese Renesas Technology announced the development of superSRAM memory that features new type of cells. According to the press release, new SRAM is theoretically free from soft errors due to a new type of memory cell combining an SRAM cell with a DRAM capacitor technology. Renesas is going to unveil more details about this innovation designed for mobile devices at 2004 Symposium on VLSI Technology. According to the press release, the main product features are:
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