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Intel cerfities Micron’s DDR2 SDRAM chips of three densities

Micron Technology informed that its DDR2-400 and DDR2-533 SDRAM chips of three different densities were certified by Intel (according to Intel, this is the first company to receive the certificate for 1Gbit DDR2-400 chips).This list includes 256Mbit and 512Mbit DDR2-533 SDRAM and 1Gbit DDR2-400 SDRAM chips.

These components will be used in registered and unbuffered 128MB to 4GB DIMM modules that, in particular, will be installed into Grantsdale-based chipsets.

A short historical digression: 256Mbit DDR2 SDRAM chips were announced in mid-October. By that time Intel certified DDR2-400 chips with x4 and x8 architectures alongside DDR2-533 chips with x8 architectures. In 2004 DDR2 400 modules are to be primarily used in server platforms, while DDR2-533 ones — in desktop systems.

0.11µm 1Gbit DDR2-400 and DDR2-533 samples were introduced by the company late in October with the following features:

  • VDD = 1.8V, VDDQ = 1.8V
  • I/O = SSTL_18
  • 400 Mb/s/pin and 533 Mb/s/pin data rates
  • 3,200 MB/s and 4,300 MB/s for 64-bit systems
  • 4n data prefetch
  • 4 banks for 256Mbit and 512Mbit densities
  • 8 banks for 1Gbit and 2Gbit densities
  • Burst length of 4 or 8
  • WRITE latency = READ latency — 1 clock
  • Differential data strobe option
  • Duplicate RDQS data strobe option
  • READ latency: 3, 4, and 5
  • Posted CAS# additive latency: 0, 1, 2, 3, and 4 clocks
  • On-die termination (ODT)
  • Off-chip driver (OCD) output impedance calibration option
  • FBGA packaging

Early in January Micron launched volume production of its certified chips. This definitely provided some advantages to the company on the background of rivals.

The complete table of manufacturers and their certified DDR2-400/533 SDRAM chips is below (NOTE: The table is actual only at the moment of this news publication!)

DDR2-533 SDRAM
Maker, model Density Bus (bits) Latency
CL-tRCD-tRP
Elpida
EDE5108ABSE-5C
512Mbit 8 4-4-4
Hynix
HY5PS12821 F-C4
512Mbit 8 4-4-4
Micron
MT47H32M8FP-37E
256Mbit 8 4-4-4
Micron
MT47H64M8BT-37E
512Mbit 8 4-4-4
Samsung
K4T51163QB-GCD5
512Mbit 16 4-4-4
Samsung
K4T51083QB-GCD5
512Mbit 8 4-4-4


DDR2-400 SDRAM
Maker, model Density Bus (bits) Latency
CL-tRCD-tRP
Elpida
EDE5108ABSE-4C
512Mbit 8 4-4-4
Elpida
EDE5108ABSE-4A
512Mbit 8 3-3-3
Elpida
EDE5104ABSE-4C
512Mbit 4 4-4-4
Elpida
EDE5104ABSE-4A
512Mbit 4 3-3-3
Hynix
HY5PS12821F-E4
512Mbit 8 4-4-4
Hynix
HY5PS12821F-E3
512Mbit 8 3-3-3
Hynix
HY5PS12421F-E3
512Mbit 4 3-3-3
Infineon
HYB18T512800AC-5
512Mbit 8 4-4-4
Infineon
HYB18T512800AC-5
512Mbit 8 3-3-3
Infineon
HYB18T512400AC-5
512Mbit 4 4-4-4
Infineon
HYB18T512400AC-5
512Mbit 4 3-3-3
Micron
MT47H32M8FP-5
256Mbit 8 4-4-4
Micron
MT47H32M8FP-5E
256Mbit 8 3-3-3
Micron
MT47H64M4FP-5
256Mbit 4 4-4-4
Micron
MT47H64M4FP-5E
256Mbit 4 3-3-3
Micron
MT47H64M8BT-5
512Mbit 8 4-4-4
Micron
MT47H64M8BT-5E
512Mbit 8 3-3-3
Micron
MT47H128M4BT-5
512Mbit 4 4-4-4
Micron
MT47H128M4BT-5E
512Mbit 4 3-3-3
Micron
MT47H256M4BT-5
1Gbit 4 4-4-4
Micron
MT47H256M4BT-5E
1Gbit 4 3-3-3
Samsung
K4T56083QF-GCCC
256Mbit 8 4-4-4
Samsung
K4T56083QF-GCCC
256Mbit 8 3-3-3
Samsung
K4T56043QF-GCCC
256Mbit 4 4-4-4
Samsung
K4T56043QF-GCCC
256Mbit 4 3-3-3
Samsung
K4T51163QB-GCCC
512Mbit 16 4-4-4
Samsung
K4T51163QB-GCCC
512Mbit 16 3-3-3
Samsung
K4T51083QB-GCCC
512Mbit 8 4-4-4
Samsung
K4T51083QB-GCCC
512Mbit 8 3-3-3
Samsung
K4T51043QB-GCCC
512Mbit 4 4-4-4
Samsung
K4T51043QB-GCCC
512Mbit 4 3-3-3

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