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1 Gbit 0.13-micron NAND flash memories from Toshiba

Today Toshiba Corporation announced the release of new 1 Gbit NAND flash chips, developed together with SanDisk.

New chips are made using 0.13-micron technology. They will be available in two variants: TSOP (Thin Small Outline Package) TC58NVG0S3AFT and LGA (Land Grid Array) TC58NVG0S3AXL).

Both have 128x8 bit organization, require 2.7-3.6 V, feature 2112 byte page memory and 128 + 4 block size. Besides, their write time makes 200 ms, erase time — about 2 ms per block. Data access time makes less than 25 microseconds at the first time and 50 ns at sequential access. At that data throughput makes 10 MB/sec.

TC58NVG0S3AFT samples are already available for $66 per unit, TC58NVG0S3AXL samples will appear in October. Volume production is scheduled to the end of 2002. Production volumes will make up to 300 thousand per month. 2 Gbit NAND flash memory samples, featuring two 1 Gbit chips, will also appear in October, and their up to 30 thousand per month volume production will be launched at the year-end.

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