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G.Skill Launche DDR2-800 CL4-4-3-5 Memory Modules

Samsung Develops 1/4-inch 3-megapixel CMOS Image Sensor For Ultra Slim Camera Phones

Fujifilm And IBM Expand Enterprise Tape Storage Capacity

Smart Modular Launches VLP And Standard 4GB Four-Rank DDR2-667 CoolFlex Registered DIMMs

G.Skill Launche DDR2-800 CL4-4-3-5 Memory Modules

G.Skill International Enterprise launched the 1st DDR2-800 CL4-4-3-5 series memory modules – F2-6400CL4D-2GBHK.

DDR2-800 HK Series Features:

  • Guaranteed clock speed of 800MHz (PC2-6400)
  • Low latency settings of 4 (CL), 4 (TRCD), 3 (TRP), 5 (TRAS)
  • Lifetime warranty
  • 2.0~2.1 Volts Test Voltage
  • 6-layer PCB
  • Unbuffered
  • Non-ECC
  • 240-pin DIMM
  • Available in the following packages: F2-6400CL4S-1GBHK - Single Module of 1GB; F2-6400CL4D-2GBHK - Matched Pair of 2 x 1GB modules (2GB kit)

Both single module and matched pair packages will be available through G.Skill’s authorized resellers and distributors worldwide.

Source: G.Skill International Enterprise

Samsung Develops 1/4-inch 3-megapixel CMOS Image Sensor For Ultra Slim Camera Phones

Samsung Electronics announced its first 3-megapixel CMOS image sensor with a 1/4-inch lens aperture that is well suited for ultra slim camera phones.

According to the press release, Samsung's new 1.75um-size pixel enables the 1/4-inch lens aperture to reduce the camera module size by 30 percent as opposed to a conventional 2.25um pixel 1/3-inch lens aperture 3M-pixel CIS. The small form factor allows the 1.75um-pixel, 1/4-inch lens aperture 3M-pixel CIS to immediately replace a 1/4-inch lens aperture 2M-pixel CIS module, as it shares the same physical measurements with the new 3M-pixel CIS.

The 1.75um pixel, 1/4-inch lens aperture 3M-pixel CIS shows no degrading in the picture quality compared to a 2.25um pixel, 1/3-inch lens aperture 3M-pixel CIS.

By utilizing 90-nanometer process technology, Samsung expects to mass produce the new 1.75um pixel, 1/4-inch lens aperture 3-Mp CIS in the first quarter of 2007. The new CIS chip uses Samsung's proprietary 90nm copper technology that reduces the distance between the micro-lens to the photo diode thereby resulting in maximizing the light-gathering efficiency to overcome the potential decline of image quality as the pixel size scales down.

Source: Samsung Electronics

Fujifilm And IBM Expand Enterprise Tape Storage Capacity

Fujifilm Corporation announced that it worked with IBM to enhance the company's NANOCUBIC tape formulation to create a tape cartridge with 700GB of uncompressed storage capacity. The technology was developed for use in the IBM System Storage TS1120 Tape Drive, introduced in 2005 and now the first enterprise-grade tape system to offer 700 GB of uncompressed storage capacity on a single cartridge.

This new IBM System Storage 3592 Extended Data high-capacity tape media was announced in October and is now available from IBM in both re-writeable or Write Once, Read Many (WORM) formats. It is the first 700 GB tape media available to customers. The cartridges may be integrated into the IBM TS3500 Tape Library, the 3494 Tape Library and the Silo Compatible Tape Drive Frame 3592 Model C20 as well as into stand-alone environments.

Fujifilm NANOCUBIC magnetic coating method, first unveiled in 2002, utilizes a unique dual-layer particulate layering process for creating media, which is more commercially viable than other systems such as evaporated metal or sputtering techniques. Because of this, advanced Fujifilm tape media can be produced using existing manufacturing equipment and processes.

Fujifilm NANOCUBIC uses an ultra-thin layer coating to produce higher resolution for recording digital data, ultra-low noise and high signal-to-noise ratios that are ideal for magneto-resistive (MR) heads. NANOCUBIC combines a unique binder to provide more stable chemical performance and a super-fine magnetic particle that provides stable physical performance.

Source: Fujifilm Corporation

Smart Modular Launches VLP And Standard 4GB Four-Rank DDR2-667 CoolFlex Registered DIMMs

SMART Modular Technologies has launched two new 4GB four-rank DDR2-667 registered DIMMs. Designed for use in blade servers and high-performance computing (HPC) applications, the new cost-effective modules are built using mainstream 512Mb DDR2-667/533 devices. These 512Mb devices are expected to remain in the sweet spot through 2009 according to iSuppli Corp.

Optimized for HPC applications, one of the two 4GB CoolFlex registered DIMM (P/N: SG572124AG8P0IL) features an industry-standard 1.18" height. Manufactured using standard, off-the-shelf 512Mb DDR2-667 BGAs, this 4GB module is configured as 512Mx72 with 72 placements of 128Mx4 BGAs.

The other 4GB four-rank CoolFlex registered DIMM (P/N: SG572124EG8P0IL1) leverages a very low profile or VLP (0.72") package. Configured as 512Mx72 using 1Gb dual-die-package DDPs that are based on 128x4 die, these DIMMs are well suited for use in mainstream blade server applications with up to eight vertical sockets. For example, by using these 4GB VLP DDR2-533 registered DIMMs, OEMs can populate blade servers with up to 32GB of high-speed memory.

SMART utilizes RoHs compliant CoolFlex foldable PCB architecture, dual-die-package DDP technologies and mainstream 512Mb DDR2-667 devices to offer these 4GB four-rank DDR2-667/533 registered DIMMs.

Source: SMART Modular Technologies

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