Renesas announces 512Mbit superAND flash chips
Renesas Technology announced a new series of 512Mbit superAND (AG-AND) flash chips, HN29V512A, supporting about 4MB/s peak write. New chips are designed for consumer electronics, including mobile handsets and digital cameras. 16-bit HN29V512A0A and 8-bit HN29V512A1A will be sampling in Japan in May. A 1.8V version is also under development for lower-voltage operation, with sample shipments in Japan scheduled for Q3 2004.

According to the press release, the superAND flash memory offers improved ease of use through on-chip memory management functions such as bad-sector management and error correction. Renesas Technology currently has 128-Mbit and 256-Mbit superAND flash memories in mass production, and is now releasing third phase models.
Brief chip specs:
|
Specifications |
Series |
HN29V512A |
HN29V512A0BABP |
HN29V512A1ABP |
Process |
0.13µm |
Voltage |
2.7-3.6V |
Bus |
16-bit |
8-bit |
Access time |
1st read |
90µs |
Sequential read |
50ns (min.) |
Write speed |
1.2ms/2KB or 4KB |
Package |
95-ball CSP (10x11.5x1.2mm) |
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