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Renesas introduces two series of 16Mbit superSRAM

Renesas Technology introduced new SRAM chips with lower energy consumption – superSRAM – designed for portable devices.

First produced is the 16Mbit R1LA1616R series (1.8V) and R1LV1616R (3V). Crystal sized is 32 mm² that´s minimum provided by 0.15µm process.

Chips are encased into 52-pin µTSOP (10.79x10.49mm; the left one on the photo) and 48-pin FBGA (7.5x8.5). In the future these will be offered in MCP as well. On the second superSRAM stage Renesas plans to release 32Mbit chips in 52-pin µTSOP.

Small size was achieved mainly with the help of new memory cells that combines SRAM and DRAM: p-channel thin film transistor and n-channel MOSFET typical for SRAM on one side and stacked capacitor typical for DRAM on the other side. This enabled to halve the memory cell size comparing to 6-transistor CMOS SRAM (with similar process stechnology, of course.)


Voltage, architecture, package, access time
R1LA1616R series R1LA1616RSD-7SI 1.8V, 1Mx16, 52 pin TSOP, 70ns
R1LA1616RSD-8SI 1.8V, 1Mx16, 52 pin TSOP, 85ns
R1LA1616RBG-7SI 1.8V, 1Mx16, 48 ball f-BGA, 70ns
R1LA1616RBG-8SI 1.8V, 1Mx16, 48 ball f-BGA, 85ns
R1LV1616R series
R1LV1616RSD-7SI 3V, 1Mx16, 52 pin TSOP, 70ns
R1LV1616RSD-8SI 3V, 1Mx16, 52 pin TSOP, 85ns
R1LV1616RBG-7SI 3V, 1Mx16, 48 ball f-BGA, 70ns
R1LV1616RBG-8SI 3V, 1Mx16, 48 ball f-BGA, 85ns

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