Creative Introduces Zen Vision:M Media Player
NEC's New Battery Recharges In 30 Seconds
AMD And IBM Unveil New 65nm Process Technologies
Creative Introduces Zen Vision:M Media Player
Creative Japan published details of a new portable media player Zen Vision:M, expected to be announced in Europe these days as well.
The player features 30GB of internal memory and resembles products from Apple. It has a 2.5" (63.5mm) display with 320x240 resolution. Supported formats include MP3 (VBR, up to 320Kbps), WMA (up to 320Kbps, DRM), WAV (16 bit, 48 kHz), WMV (320x240, 700Kbps, 436Kbps recommended), Motion JPEG (640x480, up to 2.5Mbps), MPEG1(640x480, up to 1.15Mbps, 352x288, 1.15Mbps recommended, MPEG2(640x480, up to 2.5Mbps, 640x480, up to 2Mbps recommended), MPEG4, DivX 4/5, XviD (720x480, up to 3Mbps, 640x480, 2Mbps recommended), JPG.
Other features:
- 62x104x19mm dimensions
- 166g weight
- 25mW/channel output power
- 97dB SNR
- 20-20,000 Hz frequency range
- 0.1% nonlinear-distortions coefficient
- Integrated FM tuner
- USB2.0 interface
Creative Zen Vision:M has three replaceable covers and costs about $330 in Japan.
NEC's New Battery Recharges In 30 Seconds
NEC today announced that it has succeeded in the development of an ultra-thin, flexible, rechargeable battery capable of 30-second charging, which can be embedded into smartcards and intelligent paper. The new organic radical battery (ORB) uses a type of plastic called organic radical polymer as its cathode.
Organic radical polymer assumes an electrolyte-permeated gel state and is the reason why the rechargeable battery is so flexible and pliant. In addition, the organic radical polymer electrode reaction is extremely fast and the supporting salts migrate through gel state polymer very smoothly. This results in little resistance to the charging reaction and an incredibly fast charging time of less than 30 seconds. The new battery also does not contain any harmful heavy metals such as mercury, lead or cadmium.
Key features of the newly developed battery include:
- 300-micron thickness
- Pliant and bendable structure
- 30-second recharging speed
- Energy density of approx. 1 mWh per cm² (This means, for example, that if the ORB was used in an active RFID device, it would support up to about several tens of thousands of signal transmissions on a single charge.)
- Does not contain any harmful metals
NEC will continue to carry out aggressive R&D in this area toward enhanced performance and reliability of thin, flexible rechargeable ORBs. The results of this research will be exhibited at iEXPO 2005 being held at Tokyo Big Site, Japan, from December 7 - 9, 2005.
Source: NEC
AMD And IBM Unveil New 65nm Process Technologies
In papers presented at the International Electron Devices Meeting (IEDM) in Washington, D.C., IBM and AMD detailed their progress in bringing new, advanced semiconductor process technologies and materials to the 65 nanometer technology generation.
The companies announced that they have successfully combined embedded Silicon Germanium (e-SiGe) with Dual Stress Liner (DSL) and Stress Memorization technology (SMT) on Silicon-On-Insulator (SOI) wafers, resulting in a 40 percent increase in transistor performance compared to similar chips produced without stress technology, while controlling power consumption and heat dissipation. The new process technologies reduce interconnect delay through the use of lower dielectric constant (lower-K) insulators, which can improve overall product performance and lower power consumption. In addition, the new technologies have shown ability to be manufactured at the 65nm generation and scaleable for use in future generations.
This technology was developed as part of the AMD and IBM joint development alliance at AMD’s fabrication facilities in Dresden, Germany, and at the IBM Semiconductor Research and Development Center in East Fishkill, N.Y.
Source: AMD
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