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Plextor Px-716A: 4x dual-layer DVD and 16x DVDR recording

Renesas announces two types of 4 Gbit AG-AND chips

Plextor Px-716A: 4x dual-layer DVD and 16x DVDR recording

Plextor introduced DVDR/RW burner, Px-716A, supporting 4x speed for dual-layer media and 16x for DVDR discs. The drive supports Intelligent Recording technologies for higher-quality burning on various media: Intelligent Tilt 3D head adjust to reduce vibrations, PoweRec optimal quality at optimal speed, AUTOSTRATEGY determines standard deviation of any blank media and automatically optimizes recording on unknown disc (5-year development of Taiyo Yuden).

  • Write
    • DVD+R:16x
    • DVD-R: 16x
    • DL DVD+R: 4x
    • CD-R: 48x
  • Rewrite
    • DVD+RW: 8x
    • DVD-RW: 4x
    • CD-RW: 24x
  • Read
    • DVD-ROM: 16x
    • CD-ROM: 48x
  • 100 ms CD access, 150 ms DVD access
  • 8 MB buffer
  • Background formatting
  • 146x41.3x170 mm size
  • 1 kg weight
  • 60K hours MTBF
  • Supported CD formats: CD-DA, CD-Extra, CD-ROM Mode-1, CD-ROM Mode-2, CD-ROM xA, Photo-CD, Video-CD, Multisession, CD TExT, CD-I, CD+G, Mixed CD
  • CD modes: Track at Once, Disc at Once, Packet Write (variable and fixed), Multisession, Session at Once, CD-MRW (Mt. Rainier)
  • Supported DVD formats: DVD-ROM, DVD-Video, Multiborder, Multisession, DVD+VR, DVD-VR
  • DVD modes: Disc at Once, Multisession, Incremental Recording, Sequential Write, Random, Access Write, Multiborder recording, Restricted Overwriting, DRT-DM
16x: (CAV) 16x: (CAV) 48x: (CAV)
12x: (PCAV) 12x: (PCAV) 32x: (PCAV)
6-8x:(PCAV) 6-8x: (PCAV) 16x: (CLV)
6x: (CLV) 6x: (CLV) 8x: (CLV)
4x: (CLV) 4x: (CLV) 4x: (CLV)
24x: (CLV) 2x: (CLV)
4x: (CLV)
24x: (CLV)
6-8x: (PCAV) 4x: (CLV) 24x: (PCAV)
6x: (CLV) 2x: (CLV) 10x: (CLV)
4x: (CLV) 1x: (CLV) 4x: (CLV)
24x: (CLV)
6-16x CAV 20-48x CAV
5-12x CAV 17-40x CAV
3-8x CAV 14-32x CAV
2-5x CAV 10-24x CAV
2x CLV 8x CLV
4x CLV
Errors Mode1: <10-12 bits
Mode2: <10-9 bit

Renesas announces two types of 4 Gbit AG-AND chips

Renesas Technology announced 4 Gbit AG-AND chips, R1FV04G13R and R1FV04G14R, that have 10 Mbps programming performance. Samples were introduced to customers in September, while volume production is scheduled to this December. According to their type, chips can be used in any NAND flash devices.

Model R1FV04G13R R1FV04G14R
Organization 512M words x 8 bits 256M words x 16 bits
Process 90 nm, AG-AND cells
Voltage 2.7~3.6 V
Programming Block 2048 + 64 bytes (1 page)
Time 600 s (4 banks at once)
Erase Block 8192 + 256 bytes
Time 1 ms
Read Primary access 100 s
Cycle 45 ns
Current @ 3.3 V Standby 20 A
Operation 10 mA
Temperature range 0-70C
Package 48-pin TSOP type I

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