Hynix Introduces High-Performance DDR4 DRAM

Hynix Semiconductor today announced that it has developed 2-gigabit DDR4 DRAM and DDR4-DRAM-based 2GB ECC-SODIMM modules applying the 30-nm process technology.

DDR4 DRAM is the next-generation memory that consumes less power and transfers data twice as fast compared with the existing DDR3 DRAM. The device works at 2400 Mbps which is also 80% faster than the 1333 Mbps of DDR3. Modules operate at 1.2V and process up to 19.2GB of data per second with a 64-bit I/O.

DDR4 DRAM meets the JEDEC standard and the modules are designed for micro servers. Hynix plans to start volume production of DDR4 in the second half of 2012.

According to the market research firm iSuppli, the market portion of the DDR4 DRAM is expected to increase from 5% in 2013 to over 50% in 2015, and this kind of memory should become mainstream. The demand for DDR3 DRAM is expected to reach its peak in 2012 with 71% market share and should decrease to 49% in 2014.

Source: Hynix Semiconductor

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