Samsung Introduces High-speed 512GB SSD Utilizing New Toggle-mode DDR NAND Memory
The new 512GB SSD makes use of a 30 nanometer-class 32 gigabit chip that the company began producing last November. The toggle-mode DDR structure together with the SATA 3Gbps interface generates a maximum sequential read speed of 250MB/s and a 220MB/s sequential write speed, both of which provide three-fold the performance of a typical hard disk drive.
Samsung provides further gains in power efficiency by having developed a low-power controller specifically for toggle-mode DDR NAND. The resulting power throttling capability enables the drive's high-performance levels without any increase in power consumption over a 40nm-class 16Gb NAND-based 256GB SSD. The controller also analyzes frequency of use and preferences of the user to automatically activate a low-power mode that can extend notebook's battery life by an hour or more.
The Samsung 512GB SSD makes use of reinforced 256bit AES (advanced encryption standard) encryption to ensure higher security, protecting personal data against online hackers or undesired access when its host PC is misplaced or lost.
Samsung also provides streamlined boot time and application access with this new SSD, showing an approximately nine-fold improvement in random performance over HDDs. Also, an intelligent operation management function optimizes the SSD's background working environment. Coupled with the popular Windows 7 TRIM feature the operation management function secures the reliability of the drive in write mode.
Samsung plans to begin volume production of the 512GB SSD next month. The new capacity extends Samsung's range of SSD capacities from 64GB to 512GB.
Source: Samsung Electronics
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