Intel, Micron Introduce 25nm NAND
Intel Corporation and Micron Technology today announced the world's first 25nm NAND technology, which provides a more cost-effective path for increasing storage capacity in such popular consumer gadgets as smartphones, personal music and media players (PMPs), as well as the new high-performance class of solid-state drives (SSDs).
Manufactured by IM Flash Technologies (IMFT), Intel and Micron's NAND flash joint venture, the 25nm process produces 8GB of storage in a single NAND device, creating a high-capacity storage solution for today's tiny consumer gadgets. It measures just 167mm2 -- small enough to fit through the hole in the middle of a CD, yet packs more than 10 times the data capacity of that CD.
The 25nm, 8GB device is sampling now and is expected to enter mass production in the second quarter of 2010. For consumer electronics manufacturers, the device provides the highest-density in a single 2 bits-per-cell MLC die that will fit a thin small-outline package (TSOP). Multiple 8GB devices can be stacked in a package to increase storage capacity. The new 25nm 8GB device reduces chip count by 50 percent compared to previous process generations, allowing for smaller, yet higher density designs and greater cost efficiencies. For example, a 256GB solid-state drive (SSD) can now be enabled with just 32 of these devices (versus 64 previously), a 32GB smartphone needs just four, and a 16GB flash card requires only two.
Source: Intel Corporation
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