Micron Samples Industry Fastest Mobile DRAM

Micron Technology today announced that it is sampling to customers and major enablers the industry's fastest 512 megabit (Mb) Mobile DRAM component, designed for the latest feature-rich mobile electronic devices. Mass production is expected in the second quarter of this year. With mobile applications adding increased computing and multimedia functionality, faster and better performing memory becomes paramount for optimizing performance.

Micron's 512 Mb Mobile DRAM addresses the needs of today's most advanced mobile devices by delivering maximum clock speeds of up to 200MHz allowing the transfer of 400 Mbs of data per second. This industry-leading speed provides the additional bandwidth necessary to boost the operating capability of mobile applications, including running more functions simultaneously without performance issues or powering high speed video.

In addition to meeting the JEDEC standard 1.8 volt input/output (I/O), the device is also available with a 1.2 volt I/O option that improves signaling for high-speed, high-bandwidth operation and is a key design requirement for next generation mobile chip sets. It also offers an extended operating temperature range from -40 degrees Celsius to +85 degrees Celsius making it optimal for products performing in extreme conditions. The company plans to assemble the 512 Mb Mobile DRAM with NAND flash and Managed NAND parts, and also intends to offer it in a multi-chip package or a package-on-package stack.

Source: Micron Technology

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