Intel And Micron Sampling Multi-Level Cell NAND Flash Memory
Intel Corporation and Micron Technology today announced they are sampling 50-nanometer multi-level cell (MLC) NAND flash memory manufactured by their NAND flash memory joint venture, IM Flash Technologies.
The 50nm MLC technology, sampling at a 16 gigabit die density, complements the previously announced 50nm single-level cell (SLC) products that the companies are shipping today at a 4 Gb die density.
Along with producing NAND flash out of Micron facilities in Boise, Idaho, and Manassas, Va., the IM Flash joint venture has also been manufacturing wafers since February at a 300mm facility in Lehi, Utah, that is completely dedicated to the joint venture. Additionally, the companies are moving forward on plans to bring a new IM Flash manufacturing facility to Singapore with their recently announced Singapore partnership.
Source: Intel Corporation
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