Toshiba To Launch 56nm, 16-Gigabit NAND Flash Memory
Toshiba Corporation today announced the introduction of 16Gb (2 GB) and 8Gb NAND flash memory, fabricated with cutting-edge 56-nanometer process technology co-developed with SanDisk Corporation of Milpitas, California (USA). The 16Gb is the highest density single-chip NAND flash memory yet achieved.
Advancing from limited production of engineering samples at the end of 2006, Toshiba is now increasing shipments of commercial samples of new 8Gb single-chip, multi-level cell (MLC) NAND flash memories, the current mainstream density, with availability from today. Toshiba intends to start shipping commercial samples of 16Gb NAND flash memories in the late first quarter of this year.
A write performance of 10-megabytes a second, twice that of Toshiba's present MLC products, reflects the efficiency obtained with advanced process technology and doubling page size, the amount of data that can be written at one time, from 2,112 bytes to 4,314 bytes.
Source: Toshiba Corporation
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