Samsung Reveals First Gigabit-Density Mobile DRAM
Samsung Electronics announced that it has developed the industry's first one gigabit Mobile DRAM for mobile products, using 80nm process technology.
The new 1Gb Mobile DRAM chip uses the same packaging technique as the 512Mb double-die stack 1Gb package, however it introduces a new temperature-sensing feature. This new temperature-compensated, self-refresh feature maximizes the self-refresh cycle to reduce power drain in standby mode by 30 percent over conventional memory chip designs.
Also offering a more compact form factor, the new 1Gb Mobile DRAM chip is at least 20 percent thinner than a multi-stack package of 512Mb dies, allowing a single high-density package solution of 1.5Gb or even 2Gb Mobile DRAM memory, for which market demand is expected to grow in 2007. One 1Gb mobile DRAM also can be combined with Flash memory in multi-chip packaging including package-on-package designs.
Samsung plans to mass produce the new device beginning in the second quarter of 2007 at a time when demand for high-density 1Gb mobile DRAM is expected to be very high.
Source: Samsung Electronics
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