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Micron Introduces 1 Gigabit DDR3 Memory

Today Micron Technology, Inc. introduced 1 Gigabit DDR3 memory components. These will support data rates of 800 megatransfers per second (MT/s) to 1,600 MT/s with clock frequencies of 400 MHz to 800 MHz respectively, doubling the speed from DDR2. The DDR3 supply voltage has been reduced from 1.8V to 1.5V, reducing power consumption by up to 30 percent; the device is manufactured on Micron's 78nm process technology.

Evaluation samples of Micron's 1Gb DDR3 components are available to select customers with production expected to begin early next year. Micron's 1Gb DDR3 components will be available in various output configurations (x4, x8 and x16), and will be fully compliant to the most recent JEDEC DDR3 specifications. These components will support module densities from 512 megabytes through 4 gigabytes and a variety of module types including FBDIMMs, UDIMMs, SODIMMs, and RDIMMs.

A 2Gb DDR3 device is also expected to be available from Micron early next year, helping to enable even higher density applications.

Source: Micron Technology, Inc.

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