Micron Introduces Next-Generation Networking Memory
Micron Technology, Inc. introduced the next-generation of its reduced latency DRAM (RLDRAM) II memory to meet the growing bandwidth requirements of today’s popular networking applications that send voice, video and data – known as the triple play of communications services – across the Internet.
Micron has increased the density of its RLDRAM II networking products from 288 Mb to 576 Mb and upped the speed from 400 MHz to 533 MHz, while reducing the latency from 20 nanoseconds to 15 nanoseconds. Networking companies are rolling out next-generation networking systems, increasing their network speeds to 10 Gigabits per second from 3 Gbps. To meet these increased speeds, it is imperative that the memory technology also support additional features such as triple play services, quality of services (QoS), information multicasting, as well as traffic policing and security. These advanced services need the bandwidth and scalability to support huge numbers of information being pushed across the networks, as well as lower latency, and increased performance. RLDRAM memory is part of the solution to meet these exceedingly stringent market demands.
Micron is currently sampling to select customers with mass production expected in the first quarter of 2007.
Source: Micron Technology, Inc.
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