Elpida Memory Develops New Circuit Technologies For The Fastest 512 Megabit DDR3 SDRAM
Elpida Memory announced the development of new high-speed, low-power circuit technologies for DDR3 SDRAM in a paper presented at the International Solid State Circuits Conference (ISSCC). The new technologies consist of a transfer circuit that realizes high-speed access time (data readout time), and a data readout timing generator that enables stable high-speed data transfer rate in the DRAM's output block. Using the new technologies, Elpida produced a 512 Megabit DDR3 SDRAM with a column access time of 8.75 ns and data transfer rate of 1.6 Gbps. This is an ultra-fast next-generation DRAM for the high-end server and computing markets.
Elpida found that the data readout speed could be increased by blanket-reading data from the DRAM's memory array and transferring that data to the output circuit using time division, thus cutting down on the number of data signal lines required and reducing the parasitic capacitance. The company also devised a technology that would enable high-speed data transfer by developing counters that could control generation of the data readout timing on a clock with double the cycle time of DDR2 while still providing enough operating margin.
Newly developed technologies include time-division transfer of blanket-read data in the memory array and data readout timing generator operating on double input clock cycle. (Please visit company's website for details.)
Based on these new technologies, Elpida produced 512 Megabit DDR3 SDRAM devices using 90 nm process technology. Repeated evaluation results showed that even at low 1.5 V operation, consistent, high yield production of DDR3 SDRAM chips with the world's highest performance at low voltage - a column access time of 8.75 ns and a data transfer rate of 1.6 Gbps - is achievable using these new technologies. Elpida is ready to start the production of DDR3 SDRAM using these new technologies, and mass production will begin based on market demand.
Source: Elpida Memory
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