Intel Makes New Transistors
Intel announced development of a new, ultra-fast, yet very low power prototype transistor using new materials that could form the basis of its microprocessors and other logic products beginning in the second half of the next decade.
Intel and QinetiQ researchers have jointly demonstrated an enhancement-mode transistor using indium antimonide (chemical symbol: InSb) to conduct electrical current. The prototype transistor is much faster and consumes less power than previously announced transistors. Intel anticipates using this new material to complement silicon, further extending Moore’s Law.
InSb is in a class of materials called III-V compound semiconductors which are in use today for a variety of discrete and small scale integrated devices such as radio-frequency amplifiers, microwave devices and semiconductor lasers.
Researchers from Intel and QinetiQ have previously announced transistors with InSb channels. The prototype transistors, with a gate length of 85nm, are the smallest ever, at less than half the size of those disclosed earlier. This is the first time that enhancement mode transistors have been demonstrated. Enhancement mode transistors are the predominant type of transistor used in microprocessors and other logic. These transistors are able to operate at a reduced voltage, about 0.5 volts – roughly half of that for transistors in today’s chips – which leads to chips with far less power consumption.
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