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Micron Delivers New PSRAM Device

Micron introduced a new memory device designed for low-density, entry-level mobile handsets. The new x16 burst A/D multiplexed pseudo-SRAM (PSRAM) solution is said to further reduce costs for manufacturers within basic-feature handset designs due to additional features incorporated into an already low-cost CellularRAM device.

The x16 burst A/D multiplexed PSRAM features combined address and data pins used for both READ and WRITE functions and provides over 30% pin count reduction. The device is available in bare die form that enables designers to maximize board space and reduce substrate complexity.

Micron's x16 burst A/D multiplexed PSRAM is available now for general customer sampling in 64 megabit (Mb), 32Mb and 16Mb densities. Volume production is expected during the first quarter of 2006 to support emerging market demand for entry-level handsets.

Source: Micron

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