Intel Developing Ultra-Low Power Manufacturing Process
Intel is developing an ultra-low power derivative of its high-performance 65nm logic manufacturing process that will enable production of very low-power chips for mobile platforms and small-form factor devices. The ultra-low power process will be Intel's second process based on 65 nm process technology.
Intel's ultra-low power, 65nm process technology includes several key transistor modifications which result in significant reductions in the three major sources of transistor leakage: sub-threshold leakage, junction leakage and gate oxide leakage. The benefits of reduced transistor leakage are lower power and increased battery life.
The new processes also combine higher-performance and lower-power transistors, a second-generation version of Intel's strained silicon, eight high-speed copper interconnect layers and a low-k dielectric material. Building chips using the 65 nm processes will allow Intel to double the number of transistors it can build on a single chip today (using Intel's 90nm technology).
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