Spansion Demonstrates 90nm Mirrorbit Based Flash Memory
Spansion, the Flash memory venture of AMD and Fujitsu Limited, showed silicon of its single-chip 1 Gbit GL NOR Flash memory and demonstrated working silicon of its 1Gb ORNAND Flash memory based on 90nm MirrorBit technology. Both novelties are manufactured at Spansionís flagship Fab 25 facility in Austin, Texas.
During an event held at Fab 25, Spansion conducted a live demonstration of a 1 Gb ORNAND device based on MirrorBit technology at 90nm for use as data storage in a wireless handset application. Using a handset reference design equipped with Spansion NOR Flash memory for code storage and a 1Gb MirrorBit ORNAND device for data storage, Spansion representatives demonstrated multimedia features including camera, camcorder, music and video playback. In particular, demonstration highlighted the write performance fast enough for a QVGA camcorder (320x240 pixels) recording at 15 frames per second.
Spansion also provided further details for its 90nm MirrorBit product roadmap, including samples of 1Gb devices with both NOR and ORNAND architectures planned for this year, and plans for a 2Gb density ORNAND device by mid next year. In addition, the company expects to sample its very high performance 1.8-volt 512Mb NOR device in early 2006. Spansion also plans to begin production of 65nm MirrorBit technology in 2006.
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