Infineon Offers New Low-Noise RF Transistors Based On SiGe Carbon Technology
Infineon unveiled its new SiGe:C (Silicon-Germanium Carbon) process technology for cost-effective, high-performance radio frequency semiconductor devices. The SiGe:C technology is the foundation for Infineonís latest generation of Heterojunction Bipolar Transistors (HBTs), which provide noise figures for silicon-based discrete transistors of only 0.75 dB at 6 GHz and high gain of up to 19 dB at 6 GHz.
Infineon´s New HBTs
The new SiGe:C transistors are suitable for use in a wide range of RF and wireless applications using frequencies above 10 GHz, such as Low Noise Amplifiers (LNAs), microwave oscillators, and general-purpose amplifiers for various standards including Wireless LAN (802.11a, b, g), WiMAX, and Ultra Wide Band (UWB). Applications encompass Global Positioning Systems (GPS), cordless phones, satellite TV LNBs (Low Noise Blocks), and satellite-based broadcast services (e. g., XM Radio, Sirius, Digital Audio Broadcasting).
The new Infineon RF transistors have a typical transition frequency of 42 GHz and provide the lowest noise figure levels currently available in the SiGe:C market: 0.5 dB at 1.8 GHz and 0.75 dB at 6 GHz, respectively. With a typical Gms (maximum stable power gain) of 28 dB at 1.8 GHz, typical Gma (maximum available power gain) of 19 dB at 6 GHz and low current operation, these devices are ideal for a wide range of RF and wireless applications, such as WLANs. Infineonís HBT chips feature gold metallization for extra high reliability.
The BFP740 HBT series is in volume production and available in standard SOT343 (BFP740) packages, flatlead TSFP-4 (BFP740F) packages and ultra small 3-pin leadless TSLP-3 (BFR740L3) packages. The TSLP-3 package size is only 1.0x0.6x0.4mm.
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