FASL LLC launches mass production of 0.11µm Spansion Flash memory series
FASL LLC, the joint venture of Advanced Micro Devices and Fujitsu, launched mass production of Spansion Flash memory series using the 0.11µm floating gate process. According to the general manager of FASL LLC wireless technologies group, the transition from 0.13µm to 0.11µm and the mass production might make Spansion the best price/performance high-density memory in 2004.
At the moment many mobile handset makers estimate possibilities of using such memory products in their solutions, because this can reduce comm production costs by 30%. Having studied the production expertise at Fab 25 and JV3 fabs "dedicated" to Spansion, FASL LLC optimized the process and increased the amount of crystals per wafer by 50% comparing to the previous releases.
According to AMD press release, in the nearest future the company is going to unveil more 0.11µm Spansion products, including 1.8V burst memory and 3V page memory for wireless networks.
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