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Micron Technology samples 1Gbit DDR2-400 and DDR2-533 chips

Micron Technology started sampling new 1Gbit DDR2 SDRAM chips that enable to produce 4Gb DDR2 modules (also introduced in limited amounts).

The new 1Gbit DDR2-400 and DDR2-533 are made using 0.11µm process. Other brief specs are below:

  • VDD = 1.8V, VDDQ = 1.8V
  • I/O = SSTL_18
  • Linear throughput: 400Mbps/pin or 533Mbps/pin
  • Performance: up to 3200Mb/s or 4300Mb/s in 64-bit systems
  • Organization: 4 banks for 256Mbit or 512Mbit chips; 8 banks for 1Gbit and 2Gbit chips
  • Supported packet length: 4 or 8
  • WRITE latency = READ latency 1 clock
  • Optional bidirectional strobe
  • READ latency: 3, 4, and 5
  • Programmable additive CAS Latency: 0, 1, 2, 3, and 4
  • Differential strobe
  • Off-chip output driver calibration (OCD)
  • On-die termination (ODT)
  • Package: FBGA

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