Micron Technology samples 1Gbit DDR2-400 and DDR2-533 chips
Micron Technology started sampling new 1Gbit DDR2 SDRAM chips that enable to produce 4Gb DDR2 modules (also introduced in limited amounts).
The new 1Gbit DDR2-400 and DDR2-533 are made using 0.11µm process. Other brief specs are below:
- VDD = 1.8V, VDDQ = 1.8V
- I/O = SSTL_18
- Linear throughput: 400Mbps/pin or 533Mbps/pin
- Performance: up to 3200Mb/s or 4300Mb/s in 64-bit systems
- Organization: 4 banks for 256Mbit or 512Mbit chips; 8 banks for 1Gbit and 2Gbit chips
- Supported packet length: 4 or 8
- WRITE latency = READ latency — 1 clock
- Optional bidirectional strobe
- READ latency: 3, 4, and 5
- Programmable additive CAS Latency: 0, 1, 2, 3, and 4
- Differential strobe
- Off-chip output driver calibration (OCD)
- On-die termination (ODT)
- Package: FBGA
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