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Samsung: 4 Gb NAND, Fusion Memory and new technologies

Samsung Electronics Co., Ltd. announced 70 nanometer 4GbNAND Flash memory and an 80nm DRAM chip. In addition, the company announced a single chip memory solution, called fusion memory, which takes the multi-chip package and system-in-package concepts one step further to deliver a single design combining memory and logic.

Samsung´s 4Gb NAND flash memory incorporates a 70nm node design that allows to achieve memory cell´s size of 0.025Ám?. The 4Gb NAND flash is the industry´s first to feature a 300-angstrom tungsten gate, which reduces inter-cell resistance and noise level to ensure higher performance in multi-gigabit memory designs. Samsung expects the new tungsten gate to be adaptable in up to 50nm designs.

In DRAM sector, Samsung announced an 80nm 512Mb monolithic device, that has adopted Recess Channel Array Transistor (RCAT) technology to enhance data refresh features. The RCAT technology minimizes cell size by building a three-dimensional transistor to pair each capacitor in the DRAM circuitry, significantly enhancing density. The new DRAM utilizes low resistance tungsten gates for higher performance and low temperature, and a high-k oxide process for low voltage requirements that go beyond 1.5V, a standard feature of DDR3 DRAM. Mass production of the cutting edge technology will begin with 1Gb to 512Mb densities at 3Gigabit per second and faster speeds.

Well, as for the fusion memory, it is an integrated, single-chip that combines high density memory and logic, together with software availability. The first Fusion memory device is a 512Mb NAND flash memory with logic interface built on a single piece of silicon, called OneNAND. Specialists from Samsung expect that the new Fusion technology will allow to refuse from NOR Flash+Memory combinations in applications with high data processing throughput requirements.


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