Hynix announces 0.10-micron 512 Mbit DDR chips
Hynix Semiconductor announced new 512 Mbit DDR SDRAM chips made using 0.10-micron process. Perhaps, it would be more logical to announce new process technology instead, but the company decided to follow a more practical way.
According to the company, new 512 Mbit DDR SDRAM chips are compatible with DDR 266, DDR 333, and DDR 400. New process technology is launched at three Hynix facilities in Korea, and Oregon, USA.
Hynix also plans to launch volume production of such chips later this year. The production of 0.10-micron 256 Mbit and 1 Gbit DDR SDRAM chips is scheduled to H1 2003.
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