Samsung announces 72Mb DDR3 SRAM module
Samsung informed about the release of 72Mb DDR3 SRAM module, providing 1.5Gb/s read/write for next-generation servers and workstations.
Being made using 90-nm process technology, Samsung SRAM chips require 1.2V.The making process included traditional laser KrF lithography.
More light on the technology of making miniature (0.79 sq.micron) SRAM Samsung cells will be shed at International Solid-State Circuits Conference to take place in San Francisco 9-13 February. 72Mb modules are expected in volume production in H2 2003.
Write a comment below. No registration needed!
|
|