Fujitsu updates mobile handset memory series
Fujitsu Microelectronics America, Inc. (FMA) released two new Mobile FCRAM chips for 3G handsets. 32Mbit MB82DBS02163C and 64Mbit MB82DBS04163B models are the first to support burst read/write. They require 1.65 to 1.95V voltage at 66MHz (RL=5) clock (burst). Initial seek is 70ns, burst seek – 20ns.
Both chips meet the Common Specification for Mobile RAM (COSMORAM). The company also plans to release up to 128Mbit 100MHz FCRAM solutions.
These novelties are made for camera-equipped phones operating with intense multimedia streams.
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