Elpida ready to make lower-power DDR modules
Memory, Inc. released the second generation of 256Mbit DDR and SDR Mobile RAM modules with lower energy consumption designed for mobile handsets, PDAs, digital cameras, etc. New chips are made using 0.11µm process providing up to 400Mb/s throughput; are organized as 4M words x 16 bits x 4 bank; require 1.8±0.15V VDD/VDDQ; are packed into 9x13mm 54-pin FBGA; feature 8192 cycles / 64ms self refresh.
256Mbit SDR Mobile RAM are already sampling with volume production scheduled to August. The DDR version will feature 60-pin FBGA; its volume production will be launched in June.
Currently low-power DRAM is being developed by Samsung Electronics Co. Ltd., Micron Technology Inc., Infineon Technologies AG and Nanya Technology. These believe such chips to become a new source of DRAM market growth.
Source: EE Times
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