Samsung Electronics launches volume production of 256Mbit GDDR2
Today Samsung Electronics launched volume production of 256Mbit Graphics Double Data Rate2 (GDDR2) SDRAM chips. This memory will allow to simplify the production of new-generation graphics cards with up to 512Mb of memory.
Samsung´s GDDR2 SDRAM chips meet JEDEC specs and are packaged into 144-pin Fine-pitch Ball Grid Arrays (FBGA). They support all the technical features mentioned in GDDR2 specs, including:
- 1.8V voltage
- Differential strobe
- Off-chip output driver calibration (OCD)
- On-die termination (ODT)
- Programmable CAS Latency: 3, 4, 5, 6 Optional; Programmable Additive Latency: 0, 1 , 2 , 3 and 4, impulse interrupts
- Write Latency(WL) = Read Latency(RL) 1
- Burst Length 4 (Read/Write Interrupt Prohibited but only Read interrupted by Read & Write interrupted by Write are allowed), or 8 (Interleave/nibble sequential) Programmable Sequential / Interleave Burst Mode
- 4 words per clock with Read/Write Latency disabled (enabled in single-phase modes only)
- 8 words per clock with sequential alternating / interrupted phases at fully programmable switching between sequential and alternating bursts
- Bidirectional strobe, (Single-ended data-strobe is an optional feature) with Off-Chip Driver(OCD) Impedance Adjustment
- Auto Refresh, CBR, Self Refresh; Refesh Period 7.8ms, 8192 regeneration cycles / 64ms)
Samsung states that its 256Mbit GDDR2 SDRAM chips also support GDDR3 standard that is expected to be approved by JEDEC next month. Shipments to graphics card makers have already started.
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