Hynix submitts 512Mb DDR2 SDRAM samples to Intel for evaluation
Hynix Semiconductor, Inc. announced it
has submitted 512Mb DDR2 SDRAM devices to Intel Corporation for evaluation and
its samples are successfully booting with Intel´s next generation dual processor
server chipset code named ‘Lindenhurst.’ The Hynix 512Mb DDR2 SDRAM is currently
available in sample quantities with mass production scheduled for early 2004.
The Hynix 512Mb DDR2 SDRAM evaluation for validation by Intel follows its 512Mb
DDR400 validation in June of 2003 and further demonstrates the Hynix leadership
position in the high-speed DDR memory market.
The Hynix 512Mb DDR2 SDRAM devices are designed and manufactured on the company’s
advanced .11-micron Golden Chip process technology. The devices being developed
can operate at a data transfer rate of up to 667 (Mbps) per pin at 1.8 V and
are offered in 128M x 4 bits, 64M x 8 bits, and 32M x 16 bits configurations
in a FBGA package and fully comply with JEDEC DDR2 specifications and standards.
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