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Hynix submitts 512Mb DDR2 SDRAM samples to Intel for evaluation

Hynix Semiconductor, Inc. announced it has submitted 512Mb DDR2 SDRAM devices to Intel Corporation for evaluation and its samples are successfully booting with Intel´s next generation dual processor server chipset code named ‘Lindenhurst.’ The Hynix 512Mb DDR2 SDRAM is currently available in sample quantities with mass production scheduled for early 2004. The Hynix 512Mb DDR2 SDRAM evaluation for validation by Intel follows its 512Mb DDR400 validation in June of 2003 and further demonstrates the Hynix leadership position in the high-speed DDR memory market.


The Hynix 512Mb DDR2 SDRAM devices are designed and manufactured on the company’s advanced .11-micron Golden Chip process technology. The devices being developed can operate at a data transfer rate of up to 667 (Mbps) per pin at 1.8 V and are offered in 128M x 4 bits, 64M x 8 bits, and 32M x 16 bits configurations in a FBGA package and fully comply with JEDEC DDR2 specifications and standards.


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